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| NTD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features * * * * Low RDS(on) High Current Capability Low Gate Charge These are Pb-Free Devices V(BR)DSS 40 V http://onsemi.com Applications RDS(ON) TYP 21 m @ 10 V ID MAX (Note 1) 38 A * Electronic Brake Systems * Electronic Power Steering * Bridge Circuits MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current - RqJC (Note 1) Power Dissipation - RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 20 38 27 75 75 -55 to 175 36 150 W Units V V A N-Channel D G S tp = 10 ms 4 A MARKING DIAGRAM 1 YWW 54 07NG Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to Source Avalanche Energy - (VDD = 50 V, VGS = 10 V, IPK = 17 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A mJ 12 3 DPAK CASE 369C STYLE 2 Y WW 5407N G TL 260 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = Year = Work Week = Specific Device Code = Pb-Free Device ORDERING INFORMATION Device Package DPAK (Pb-Free) DPAK (Pb-Free) Shipping 75 Units / Rail 2500 / Tape & Reel NTD5407NG NTD5407NT4G THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Case (Drain) Symbol RJC Max 2.0 Units C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 October, 2005 - Rev. 0 Publication Order Number: NTD5407N/D NTD5407N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 40 V TJ = 25C TJ = 100C VGS = 0 V, ID = 250 mA 40 39 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 30 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.5 -6.0 3.5 V mV/C VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 10 A 21 32 15 26 40 mW Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge gFS VGS = 10 V, ID = 18 A S CISS COSS CRSS QG(TOT) QGS QGD VGS = 10 V, VDS = 32 V, ID = 38 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V 615 173 80 20 2.25 10.5 1000 pF nC SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 10 V, VDD = 32 V, ID = 38 A, RG = 2.5 W 6.8 17 66 51 ns SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W 10 175 13 23 ns DRAIN-SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD VGS = 0 V, IS = 5.0 A TJ = 25C TJ = 125C 0.9 0.75 38 VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A 20.5 17 40 nC ns 1.1 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5407N TYPICAL PERFORMANCE CURVES 60 ID, DRAIN CURRENT (AMPS) 50 5.5 V 40 5V 30 4.5 V 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4V 3.5 V 0 0 VGS = 7 V to 10 V TJ = 25C ID, DRAIN CURRENT (AMPS) 6V 60 VDS 10 V 50 40 30 20 TJ = 100C 10 TJ = 25C TJ = -55C 3 5 6 7 1 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 3 4 5 6 7 8 9 10 11 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID = 38 A TJ = 25C 0.105 0.095 0.085 0.075 0.065 0.055 0.045 0.035 0.025 0.015 0.005 10 Figure 2. Transfer Characteristics TJ = 25C VGS = 5 V VGS = 10 V 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 175C 100 10 TJ = 100C -25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5407N TYPICAL PERFORMANCE CURVES 1800 VDS = 0 V C, CAPACITANCE (pF) Ciss 1200 Crss Ciss 600 Coss 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 15 35 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 12 QT 9 QGS VDS QGD VGS 28 21 6 14 3 0 0 ID = 36 A TJ = 25C 5 10 15 QG, TOTAL GATE CHARGE (nC) 7 0 20 30 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 38 A VGS = 10 V t, TIME (ns) 100 tr td(on) 10 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 15 14 VGS = 0 V 13 TJ = 25C 12 11 10 9 8 7 6 5 4 3 2 1 0 0.3 0.9 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) td(off) tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 1.2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTD5407N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD5407N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTD5407N/D |
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